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| LESHAN RADIO COMPANY, LTD. Chopper Transistor PNP Silicon 3 COLLECTOR 3 1 BASE MMBT404ALT1 1 2 EMITTER 2 CASE 318-08, STYLE 6 SOT- 23 (TO-236AB) MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V EBO IC Value - 35 - 40 - 25 - 150 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,(1) T A =25 C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R JA PD Symbol PD Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C R JA T J , T stg DEVICE MARKING MMBT404ALT1 = 2N ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = -10 mAdc, I B = 0) Collector- Emitter Breakdown Voltage (I C = -10 Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = -10 Adc, I C = 0) Collector Cutoff Current (V CE = -10Vdc, I E = 0) Emitter Cutoff Current (V EB= -10Vdc, I C = 0) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V V V (BR)CEO - 35 - 40 - 25 -- -- -- -- -- -- -- -- -- -- -100 -100 Vdc Vdc Vdc nAdc nAdc (BR)CBO (BR)EBO I CBO I EBO O1-1/2 LESHAN RADIO COMPANY, LTD. MMBT404ALT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C = -12 mAdc, V CE = - 0.15 Vdc) Collector-Emitter Saturation Voltage (I C = -12mAdc, I B = - 0.4 mAdc) (I C = - 24mAdc, I B = - 1.0 mAdc) Base-Emitter Saturation Voltage (I C = -12mAdc, I B = - 0.4 mAdc) (I C = -24mAdc, I B = - 1.0 mAdc) hFE VCE(sat) -- -- V BE(sat) 100 -- 400 -- Vdc -- -- -- -- - 0.15 - 0.20 Vdc - 0.85 - 1.00 -- -- SMALL-SIGNAL CHARACTERISTICS Output Capacitance (V CB= - 6.0 Vdc, I E = 0, f = 1.0 MHz) C obo -- -- 20 pF SWITCHING CHARACTERISTICS Delay Time(VCC = -10Vdc, IC = -10 mVdc) (Figure 1) Rise Time ( I B1 = -1.0 mAdc, I BE(off) = -14Vdc) Storage Time (V CC = -10 Vdc, I C = -10 mAdc) Fall Time (I B1 = I B2 = -1.0 mAdc)(Figure 1) td tr ts tf -- -- -- -- 43 180 675 160 -- -- -- -- ns ns ns ns V BB R BB 1.0 k 0.1 F V in 10 k 51 RB V CC = -10 V 1.0 k TO SCOPE t on , t d , t r t off , t s and t f V in (Volts) -12 +20.6 V BB (Volts) +1.4 -11.6 Voltages and resistor values shown are for I C = 10 mA, I C /I B = 10 and I B1 = I B2 Figure 1. Switching Time Test Circuit O1-2/2 |
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